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1

Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling

Arash Hazeghi, Tejas Krishnamohan, H.-S. Philip Wong

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 492 KB

english, 2007

2

High performance germanium MOSFETs

Krishna Saraswat, Chi On Chui, Tejas Krishnamohan, Donghyun Kim, Ammar Nayfeh, Abhijit Pethe

Journal:

Materials Science and Engineering: B

Year:

2006

Language:

english

File:

PDF, 1.10 MB

english, 2006

3

[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Investigation of ballistic current in scaled Floating-gate NAND FLASH and a solution

Raghunathan, Shyam, Krishnamohan, Tejas, Parat, Krishna, Saraswat, Krishna

Year:

2009

Language:

english

File:

PDF, 1.16 MB

english, 2009

4

[IEEE 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - San Diego, CA, USA (2009.09.9-2009.09.11)] 2009 International Conference on Simulation of Semiconductor Processes and Devices - Hole Mobility and Its Enhancement with Strain for Technologically Relevant III-V Semiconductors

Nainani, Aneesh, Kim, Donghyun, Krishnamohan, Tejas, Saraswat, Krishna

Year:

2009

Language:

english

File:

PDF, 1.85 MB

english, 2009

5

[IEEE ESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, UK (2008.09.15-2008.09.19)] ESSDERC 2008 - 38th European Solid-State Device Research Conference - High mobility Ge and III–V materials and novel device structures for high performance nanoscale MOSFETS

Krishnamohan, Tejas, Saraswat, Krishna

Year:

2008

Language:

english

File:

PDF, 1.23 MB

english, 2008

6

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Session 34: Memory technology - nanoscale poly-FG and charge trap flash non-volatile memories

Tejas Krishnamohan,, Jong-Ho Lee,

Year:

2008

Language:

english

File:

PDF, 101 KB

english, 2008

7

[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Engineering of strained III–V heterostructures for high hole mobility

Nainani, Aneesh, Raghunathan, Shyam, Witte, Daniel, Kobayashi, Masaharu, Irisawa, Toshifumi, Krishnamohan, Tejas, Saraswat, Krishna, Bennett, Brian R., Ancona, Mario G., Boos, J. Brad

Year:

2009

Language:

english

File:

PDF, 1.20 MB

english, 2009

8

[IEEE 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008) - Hakone-Machi, Kanagawa (2008.09.9-2008.09.11)] 2008 International Conference on Simulation of Semiconductor Processes and Devices - Performance evaluation of uniaxial- and biaxial-strained In(x)Ga(1−x)As NMOS DGFETs

Donghyun Kim,, Krishnamohan, Tejas, Saraswat, Krishna C.

Year:

2008

Language:

english

File:

PDF, 1.69 MB

english, 2008

9

[ECS 2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT) - Barga, Italy (July 28 - August 3, 2007)] ECS Transactions - Performance Limitations of Si Bulk CMOS and Alternatives for future ULSI

Saraswat, Krishna C., Kim, Donghyun, Krishnamohan, Tejas, Pethe, Abhijit

Year:

2007

Language:

english

File:

PDF, 663 KB

english, 2007

10

[IEEE 2009 IEEE Workshop on Microelectronics and Electron Devices (WMED) - Boise, Idaho, USA (2009.04.3-2009.04.3)] 2009 IEEE Workshop on Microelectronics and Electron Devices - 3D Simulation Study of Cell-Cell Interference in Advanced NAND Flash Memory

Liu, Haitao, Groothuis, Steve, Mouli, Chandra, Li, Jian, Parat, Krishna, Krishnamohan, Tejas

Year:

2009

Language:

english

File:

PDF, 260 KB

english, 2009

11

[IEEE 2009 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA) - Hsinchu, Taiwan (2009.04.27-2009.04.29)] 2009 International Symposium on VLSI Technology, Systems, and Applications - High mobility SiGe shell-Si core omega gate pFETS

Adhikari, Hemant, Harris, Harlan R., Smith, Casey E., Yang, Ji-Woon, Coss, Brian, Parthasarathy, Srivatsan, Nguyen, Bich-Yen, Patruno, Paul, Krishnamohan, Tejas, Cayrefourcq, Ian, Majhi, Prashant, Jam

Year:

2009

Language:

english

File:

PDF, 284 KB

english, 2009

12

[IEEE 2006 International Conference on Simulation of Semiconductor Processes and Devices - Monterey, CA, USA (2006.09.6-2006.09.8)] 2006 International Conference on Simulation of Semiconductor Processes and Devices - Band to Band Tunneling limited Off state Current in Ultra-thin Body Double Gate FETs with High Mobility Materials : III-V, Ge and strained Si/Ge

Kim, Donghyun, Krishnamohan, Tejas, Nishi, Yoshio, Saraswat, Krishna

Year:

2006

Language:

english

File:

PDF, 3.59 MB

english, 2006

13

[ECS 214th ECS Meeting - Honolulu, HI (October 12 - October 17, 2008)] ECS Transactions - Performance Evaluation of 15nm Gate Length Double-Gate n-MOSFETs with High Mobility Channels: III-V, Ge and Si

Kim, Donghyun, Krishnamohan, Tejas, Saraswat, Krishna

Year:

2008

Language:

english

File:

PDF, 457 KB

english, 2008

14

ECS Transactions [ECS 218th ECS Meeting - Las Vegas, NV (October 10 - October 15, 2010)] - Novel SiGe Source/Drain for Reduced Parasitic Resistance in Ge NMOS

Raghunathan, Shyam, Krishnamohan, Tejas, Saraswat, Krishna C.

Year:

2010

Language:

english

File:

PDF, 308 KB

english, 2010

15

[IEEE 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) - Bologna, Italy (2010.09.6-2010.09.8)] 2010 International Conference on Simulation of Semiconductor Processes and Devices - Optimal design of III–V heterostructure MOSFETs

Nainani, Aneesh, Yuan, Ze, Krishnamohan, Tejas, Saraswat, Krishna

Year:

2010

Language:

english

File:

PDF, 236 KB

english, 2010

16

[IEEE 2008 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2008.06.15-2008.06.16)] 2008 IEEE Silicon Nanoelectronics Workshop - Mobilty modeling of strained germanium (s-Ge) quantum well (QW) heterostructure pMOSFETs

Krishnamohan, Tejas, Pham, Anh-Tuan, Jungemann, Christoph, Meinerzhagen, Bernd, Saraswat, Krishna C.

Year:

2008

Language:

english

File:

PDF, 1.48 MB

english, 2008

17

[ACM Press the 2006 IEEE/ACM international conference - San Jose, California (2006.11.05-2006.11.09)] Proceedings of the 2006 IEEE/ACM international conference on Computer-aided design - ICCAD '06 - Carbon nanotube transistor circuits

Wong, H.-S. Philip, Deng, Jie, Hazeghi, Arash, Krishnamohan, Tejas, Wan, Gordon C.

Year:

2006

Language:

english

File:

PDF, 359 KB

english, 2006

18

Germanium nanowire field-effect transistors with SiO[sub 2] and high-Îº HfO[sub 2] gate dielectrics

Wang, Dunwei, Wang, Qian, Javey, Ali, Tu, Ryan, Dai, Hongjie, Kim, Hyoungsub, McIntyre, Paul C., Krishnamohan, Tejas, Saraswat, Krishna C.

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 494 KB

english, 2003

19

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Comparison of (001), (110) and (111) uniaxial- and biaxial- strained-Ge and strained-Si PMOS DGFETs for all channel orientations: Mobility enhancement, drive current, delay and off-state leakage

Krishnamohan, Tejas, Kim, Donghyun, Thanh Viet Dinh,, Pham, Anh-tuan, Meinerzhagen, Bernd, Jungemann, Christoph, Saraswat, Krishna

Year:

2008

Language:

english

File:

PDF, 837 KB

english, 2008

20

PERFORMANCE LIMITATIONS OF Si CMOS AND ALTERNATIVES FOR NANOELECTRONICS

SARASWAT, KRISHNA C., CHUI, CHI ON, KAPUR, PAWAN, KRISHNAMOHAN, TEJAS, NAYFEH, AMMAR, OKYAY, ALI K., SHENOY, ROHIT S.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2006

Language:

english

File:

PDF, 1.17 MB

english, 2006

21

[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - Solid-State and Nanoelectronic Devices - Nanoscale Flash and DRAM Technologies

Krishnamohan, Tejas, Fung, Samuel

Year:

2007

Language:

english

File:

PDF, 48 KB

english, 2007

22

[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Experimental demonstration of high mobility Ge NMOS

Kuzum, Duygu, Krishnamohan, Tejas, Nainani, Aneesh, Sun, Yun, Pianetta, Piero A., Wong, H. S-. P., Saraswat, Krishna C.

Year:

2009

Language:

english

File:

PDF, 1.01 MB

english, 2009

23

Effect of interfacial oxide on Ge MOSCAP and N-MOSFET characteristics

Duygu Kuzum, Jin-Hong Park, Tejas Krishnamohan, Krishna C. Saraswat

Journal:

Microelectronic Engineering

Year:

2011

Language:

english

File:

PDF, 434 KB

english, 2011

24

[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Development of high-k dielectric for antimonides and a sub 350°C III–V pMOSFET outperforming Germanium

Nainani, Aneesh, Irisawa, Toshifumi, Yuan, Ze, Sun, Yun, Krishnamohan, Tejas, Reason, Matthew, Bennett, Brian R., Boos, J. Brad, Ancona, Mario G., Nishi, Yoshio, Saraswat, Krishna C.

Year:

2010

Language:

english

File:

PDF, 1002 KB

english, 2010

25

[IEEE 2008 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2008.06.15-2008.06.16)] 2008 IEEE Silicon Nanoelectronics Workshop - Theoretical evaluation of performance in biaxially-strained GaAs and In0.75Ga0.25As NMOS DGFETs

Kim, Donghyun, Krishnamohan, Tejas, Saraswat, Krishna C.

Year:

2008

Language:

english

File:

PDF, 2.34 MB

english, 2008

26

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - High Mobility Materials and Novel Device Structures for High Performance Nanoscale MOSFETs

Saraswat, Krishna C., Chui, Chi On, Kim, Donghyun, Krishnamohan, Tejas, Pethe, Abhijit

Year:

2006

Language:

english

File:

PDF, 1.41 MB

english, 2006

27

Characteristics of surface states and charge neutrality level in Ge

Kuzum, Duygu, Martens, Koen, Krishnamohan, Tejas, Saraswat, Krishna C.

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 589 KB

english, 2009

28

InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design

Nainani, Aneesh, Yuan, Ze, Krishnamohan, Tejas, Bennett, Brian R., Boos, J. Brad, Reason, Matthew, Ancona, Mario G., Nishi, Yoshio, Saraswat, Krishna C.

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 3.71 MB

english, 2011

29

Ge based high performance nanoscale MOSFETs

Krishna C. Saraswat, Chi On Chui, Tejas Krishnamohan, Ammar Nayfeh, Paul McIntyre

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 1.28 MB

english, 2005

30

A model for crystal growth during metal induced lateral crystallization of amorphous silicon

Joshi, Amol R., Krishnamohan, Tejas, Saraswat, Krishna C.

Journal:

Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 451 KB

english, 2003

31

[ECS 214th ECS Meeting - Honolulu, HI (October 12 - October 17, 2008)] ECS Transactions - Germanium for High Performance MOSFETs and Optical Interconnects

Saraswat, Krishna, Kim, Donghyun, Krishnamohan, Tejas, Kuzum, Duygu, Okyay, Ali K., Pethe, Abhijit, Yu, Hyun-Yong

Year:

2008

Language:

english

File:

PDF, 1.14 MB

english, 2008

32

Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density

Kuzum, Duygu, Krishnamohan, Tejas, Pethe, Abhijit J., Okyay, Ali K., Oshima, Yasuhiro, Sun, Yun, McVittie, James P., Pianetta, Piero A., McIntyre, Paul C., Saraswat, Krishna C.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 333 KB

english, 2008

33

[ECS 214th ECS Meeting - Honolulu, HI (October 12 - October 17, 2008)] ECS Transactions - Ge Interface Passivation Techniques and Their Thermal Stability

Kuzum, Duygu, Krishnamohan, Tejas, Pethe, Abhijit, Oshima, Yasuhiro, Sun, Yun, McVittie, James, McIntyre, Paul, Pianetta, Piero, Saraswat, Krishna

Year:

2008

Language:

english

File:

PDF, 307 KB

english, 2008

34

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope

Krishnamohan, Tejas, Kim, Donghyun, Raghunathan, Shyam, Saraswat, Krishna

Year:

2008

Language:

english

File:

PDF, 620 KB

english, 2008

35

[IEEE 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008) - Hakone-Machi, Kanagawa (2008.09.9-2008.09.11)] 2008 International Conference on Simulation of Semiconductor Processes and Devices - Band-engineering of novel channel materials for high performance nanoscale MOSFETs

Krishnamohan, Tejas

Year:

2008

Language:

english

File:

PDF, 1.22 MB

english, 2008

36

[ECS 210th ECS Meeting - Cancun, Mexico (October 29-November 3, 2006)] ECS Transactions - High Performance, Ultra-thin, Strained-Ge, Heterostructure FETs With High Mobility And Low Leakage

Krishnamohan, Tejas, Kim, Donghyun, Nishi, Yoshio, Saraswat, Krishna, Jungemann, Christoph

Year:

2006

Language:

english

File:

PDF, 797 KB

english, 2006

37

[IEEE 2009 IEEE Workshop on Microelectronics and Electron Devices (WMED) - Boise, Idaho, USA (2009.04.3-2009.04.3)] 2009 IEEE Workshop on Microelectronics and Electron Devices - Multi-Layer High-K Tunnel Barrier for a Voltage Scaled NAND-Type Flash Cell

Ramaswamy, Nirmal, Yeh, Chun-Chen, Krishnamohan, Tejas, Gowda, Srivardhan, Rocklein, Noel, Brewer, Rhett, Graettinger, Thomas, Min, Kyu

Year:

2009

Language:

english

File:

PDF, 246 KB

english, 2009

38

[IEEE 2006 IEEE/ACM International Conference on Computer Aided Design - Double Tree Hotel, San Jose, CA,USA (2006.11.5-2006.11.9)] 2006 IEEE/ACM International Conference on Computer Aided Design - Carbon Nanotube Transistor Circuits - Models and Tools for Design and Performance Optimization

Wong, H.-S., Deng, Jie, Arash,, Hazeghi,, Krishnamohan, Tejas, Wan, Gordon

Year:

2006

Language:

english

File:

PDF, 3.63 MB

english, 2006

39

[ECS 214th ECS Meeting - Honolulu, HI (October 12 - October 17, 2008)] ECS Transactions - Mobilty Modeling of Strained Germanium (s-Ge) Quantum Well (QW) Heterostructure pMOSFETs

Krishnamohan, Tejas, Pham, Anh-Tuan, Jungemann, Christoph, Meinerzhagen, Bernd, Saraswat, Krishna

Year:

2008

Language:

english

File:

PDF, 767 KB

english, 2008

40

[IEEE 2008 66th Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2008.06.23-2008.06.25)] 2008 Device Research Conference - Performance Evaluation of III-V Double-Gate n-MOSFETs

Kim, Donghyun, Krishnamohan, Tejas, Saraswat, Krishna C.

Year:

2008

Language:

english

File:

PDF, 1.48 MB

english, 2008

41

[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - Interface-Engineered Ge (100) and (111), N- and P-FETs with High Mobility

Kuzum, Duygu, Pethe, Abhijit J., Krishnamohan, Tejas, Oshima, Yasuhiro, Sun, Yun, McVittie, Jim P., Pianetta, Piero A., McIntyre, Paul C., Saraswat, Krishna C.

Year:

2007

Language:

english

File:

PDF, 1.81 MB

english, 2007

42

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Theoretical Investigation Of Performance In Uniaxially- and Biaxially-Strained Si, SiGe and Ge Double-Gate p-MOSFETs

Krishnamohan, Tejas, Jungemann, Christoph, Kim, Donghyun, Ungersboeck, Enzo, Selberherr, Siegfried, Wong, Philip, Nishi, Yoshio, Saraswat, Krishna

Year:

2006

Language:

english

File:

PDF, 302 KB

english, 2006

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